Structure of (4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium CAS 1379516-10-5

(4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium CAS 1379516-10-5

Identification

CAS Number

1379516-10-5

Name

(4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium

Synonyms

5,6-bis(2,2,2-trifluoroethoxycarbonyl)norbornane-2-sulfonate;(4-cyclohexylsulfonylphenyl)-diphenyl-sulfonium
MFCD35221709
(4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium 5,6-bis((2,2,2-trifluoroethoxy)carbonyl)bicyclo[2.2.1]heptane-2-sulfonate
(4-Cyclohexylsulfonylphenyl)-diphenyl-sulfonium 5,6-bis(2,2,2-trifluoroethoxycarbonyl)norbornane-2-sulfonate
5,6-BIS(2,2,2-TRIFLUOROETHOXYCARBONYL)NORBORNANE-2-SULFONATE (4-CYCLOHEXYLSULFONYLPHENYL)-DIPHENYL-SULFONIUM

SMILES

C1CCC(CC1)S(=O)(=O)C2=CC=C(C=C2)S+C4=CC=CC=C4.C1C2CC(C1C(C2C(=O)OCC(F)(F)F)C(=O)OCC(F)(F)F)S(=O)(=O)[O-]

StdInChI

InChI=1S/C24H25O2S2.C13H14F6O7S/c25-28(26,23-14-8-3-9-15-23)24-18-16-22(17-19-24)27(20-10-4-1-5-11-20)21-12-6-2-7-13-21;14-12(15,16)3-25-10(20)8-5-1-6(7(2-5)27(22,23)24)9(8)11(21)26-4-13(17,18)19/h1-2,4-7,10-13,16-19,23H,3,8-9,14-15H2;5-9H,1-4H2,(H,22,23,24)/q+1;/p-1

StdInChIKey

WZYJDMGIOFBBAH-UHFFFAOYSA-M

Molecular Formula

C37H38F6O9S3

Molecular Weight

836.9

MDL Number

MFCD35221709

Properties

Appearance

White to off-white powder

Safety Data

Symbol

exclamation-mark-jpgGHS07

Signal Word

Warning

Hazard statements

H315-H319-H335

Precautionary Statements

P261;P305+351+338;P302+352

RIDADR 

NONH for all modes of transport

Specifications and Other Information of Our (4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium CAS 1379516-10-5

Identification Methods

HNMR, HPLC

Purity

99% min, 99.5% min

Total metal impurities

<100ppb, <50ppb

Shelf Life

2 years

Storage

Under room temperature away from light

Known Application

This product is primarily used as a photoacid generator (PAG) in chemically amplified photoresist systems for advanced semiconductor lithography. Upon UV or deep ultraviolet (DUV) exposure, it generates strong acids that catalyze deprotection reactions in photoresists, enabling high-resolution pattern formation and improved lithographic performance.

Typical applications include:
Semiconductor photoresist formulations
Integrated circuit (IC) manufacturing
DUV lithography processes
Microelectronic and nanofabrication technologies
Chemically amplified resist (CAR) systems
Advanced packaging and electronic materials

As a sulfonium salt-based PAG, it offers high acid generation efficiency, good thermal stability, and suitability for high-resolution lithographic patterning.

This product is developed by our R&D company Watson International Ltd (https://www.watson-int.com/).