BIS(CYCLOHEXYLSULFONYL)DIAZOMETHANE CAS 138529-81-4
Identification
CAS Number
138529-81-4
Name
BIS(CYCLOHEXYLSULFONYL)DIAZOMETHANE
Synonyms
BIS(CYCLOHEXYLSULFONYL)DIAZOMETHANE
[cyclohexylsulfonyl(diazo)methyl]sulfonylcyclohexane
bis(cyclohexyl sulfonyl)diazomethane
1,1′-[(Diazomethylene)disulfonyl]dicyclohexane
SMILES
C1CCC(CC1)S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C2CCCCC2
StdInChI
InChI=1S/C13H22N2O4S2/c14-15-13(20(16,17)11-7-3-1-4-8-11)21(18,19)12-9-5-2-6-10-12/h11-12H,1-10H2
StdInChIKey
GLGXSTXZLFQYKJ-UHFFFAOYSA-N
Molecular Formula
C13H22N2O4S2
Molecular Weight
334.5
Properties
Appearance
White to off-white powder
Safety Data
RIDADR
NONH for all modes of transport
WGK Germany
3
Specifications and Other Information of Our BIS(CYCLOHEXYLSULFONYL)DIAZOMETHANE CAS 138529-81-4
Identification Methods
HNMR, HPLC
Purity
99%min, 99.5% min
Total metal impurities
<100ppb, <50ppb
Shelf Life
2 years
Storage
Under room temperature away from light
Known Application
- Photoacid Generator (PAG) for Semiconductor Lithography
The primary application of CAS 138529-81-4 is as a photoacid generator (PAG) in chemically amplified photoresists used for semiconductor manufacturing. Upon deep-UV (DUV) exposure, the compound decomposes to generate acid, enabling high-resolution pattern formation during lithographic processing. - DUV Photoresists
Widely used in:
KrF (248 nm) photoresists
DUV lithography
Semiconductor device fabrication
Microelectronic patterning processes
The product is specifically marketed for semiconductor photoresist applications by major electronic chemical suppliers. - Chemically Amplified Resist Systems
Used as an acid-generating component in:
Positive-tone photoresists
Negative-tone photoresists
Radiation-sensitive resin compositions
Advanced lithographic materials
Numerous resist patents and publications reference diazodisulfone PAGs such as BCSD for high-resolution microfabrication. - Microelectronics and Nanofabrication
Applied in:
Integrated circuit (IC) manufacturing
MEMS fabrication
Micro- and nano-patterning
Advanced semiconductor process development
Its high sensitivity and suitability for excimer-laser lithography make it valuable for fine-feature patterning technologies.
Links
This product is developed by our R&D company Watson International Ltd (https://www.watson-int.com/).












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