Structure of BIS(T-BUTYLSULFONYL)DIAZOMETHANE CAS 138529-84-7

BIS(T-BUTYLSULFONYL)DIAZOMETHANE CAS 138529-84-7

in , , , , ,

Identification

CAS Number

138529-84-7

Name

BIS(T-BUTYLSULFONYL)DIAZOMETHANE

Synonyms

2-({Diazo[(2-methyl-2-propanyl)sulfonyl]methyl}sulfonyl)-2-methylpropan
[German]
[IUPAC name – generated by ACD/Name]
2-({Diazo[(2-methyl-2-propanyl)sulfonyl]methyl}sulfonyl)-2-methylpropane
[IUPAC name – generated by ACD/Name]
2-({Diazo[(2-méthyl-2-propanyl)sulfonyl]méthyl}sulfonyl)-2-méthylpropane
[French]
[IUPAC name – generated by ACD/Name]
BIS(T-BUTYLSULFONYL)DIAZOMETHANE
Propane, 2,2′-[(diazomethylene)disulfonyl]bis[2-methyl-
[Index name – generated by ACD/Name]
2-[Diazo(2-methylpropane-2-sulfonyl)methanesulfonyl]-2-methylpropane
MFCD04038155
[MDL number]
Propane, 2,2′-[(diazomethylene)bis(sulfonyl)]bis[2-methyl-

SMILES

CC(C)(C)S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C(C)(C)C

StdInChI

InChI=1S/C9H18N2O4S2/c1-8(2,3)16(12,13)7(11-10)17(14,15)9(4,5)6/h1-6H3

StdInChIKey

SAFWZKVQMVOANB-UHFFFAOYSA-N

Molecular Formula

C9H18N2O4S2

Molecular Weight

282.373

MDL number

MFCD04038155

Properties

Appearance

White to off-white powder

Safety Data

RIDADR 

NONH for all modes of transport

WGK Germany

3

Specifications and Other Information of Our BIS(T-BUTYLSULFONYL)DIAZOMETHANE CAS 138529-84-7

Identification Methods

HNMR, HPLC

Purity

99%min, 99.5% min

Total metal impurities

＜100ppb, ＜50ppb

Shelf Life

2 years

Storage

Under room temperature away from light

Known Application

  1. Photoacid Generator (PAG) for Semiconductor Lithography
    The primary application of CAS 138529-84-7 is as a non-ionic photoacid generator (PAG) used in chemically amplified photoresists. Upon exposure to deep-UV radiation, it generates sulfonic acid that catalyzes deprotection reactions during lithographic processing.
  2. DUV and Advanced Photoresist Systems
    Used in:
    KrF (248 nm) photoresists
    DUV lithography
    Advanced semiconductor patterning
    High-resolution microfabrication processes
    Its absorption characteristics at lithographic wavelengths make it suitable for photoresist applications in semiconductor device manufacturing.
  3. Chemically Amplified Resist Formulations
    Bis(tert-butylsulfonyl)diazomethane belongs to the diazodisulfone class of PAGs and is incorporated into:
    Positive-tone photoresists
    Negative-tone photoresists
    Radiation-sensitive resin compositions
    Advanced resist materials for micro- and nano-patterning
    Patent and resist literature describe diazodisulfone PAGs as effective acid generators for high-resolution lithography.
  4. Microelectronics and Nanofabrication
    Applied in:
    Integrated circuit (IC) manufacturing
    MEMS fabrication
    Semiconductor process development
    Nanotechnology patterning applications
    Commercial suppliers specifically classify this compound as a PAG for photoresist applications in semiconductor manufacturing.

This product is developed by our R&D company Watson International Ltd (https://www.watson-int.com/).