Structure of N-trifluoromethanesulfonyl-1,8-naphthalimide CAS 85342-62-7

N-trifluoromethanesulfonyl-1,8-naphthalimide CAS 85342-62-7

in , , , , , ,

Identification

CAS Number

85342-62-7

Name

N-trifluoromethanesulfonyl-1,8-naphthalimide

Synonyms

1,3-dioxo-1h-benzo[de]isoquinolin-2(3h)-yl trifluoromethanesulfonate
1H-Benz[de]isoquinoline-1,3(2H)-dione, 2-[[(trifluoromethyl)sulfonyl]oxy]-
[Index name – generated by ACD/Name]
2-{[(Trifluormethyl)sulfonyl]oxy}-1H-benzo[de]isochinolin-1,3(2H)-dion
[German]
[IUPAC name – generated by ACD/Name]
2-{[(Trifluorométhyl)sulfonyl]oxy}-1H-benzo[de]isoquinoléine-1,3(2H)-dione
[French]
[IUPAC name – generated by ACD/Name]
2-{[(Trifluoromethyl)sulfonyl]oxy}-1H-benzo[de]isoquinoline-1,3(2H)-dione
[IUPAC name – generated by ACD/Name]
HNT
N-Hydroxynaphthalimide triflate
N-Hydroxynaphthalimide trifluoromethanesulfonate
NHN-TF
(1,3-dioxobenzo[de]isoquinolin-2-yl) trifluoromethanesulfonate
2,4-dioxo-3-azatricyclo[7.3.1.05,13]trideca-1(12),5,7,9(13),10-pentaen-3-yl trifluoromethanesulfonate
4′-Methyl-biphenyl-4-carboxylic acid methyl ester
Methanesulfonic acid, 1,1,1-trifluoro-, 1,3-dioxo-1H-benz[de]isoquinolin-2(3H)-yl ester
N-HYDROXYNAPHTHALIMIDE TRIFLATEmissing
N-Hydroxynaphthalimide trifluoromethanesulfonate, HNT, NHN-TF

SMILES

O=C1c2cccc3cccc(c23)C(=O)N1OS(=O)(=O)C(F)(F)F

StdInChI

InChI=1S/C13H6F3NO5S/c14-13(15,16)23(20,21)22-17-11(18)8-5-1-3-7-4-2-6-9(10(7)8)12(17)19/h1-6H

StdInChIKey

LWHOMMCIJIJIGV-UHFFFAOYSA-N

Molecular Formula

C13H6F3NO5S

Molecular Weight

345.247

Properties

Appearance

White to off-white powder

Safety Data

RIDADR 

NONH for all modes of transport

WGK Germany

3

Specifications and Other Information of Our N-trifluoromethanesulfonyl-1,8-naphthalimide CAS 85342-62-7

Identification Methods

HNMR, HPLC

Purity

99%min, 99.5% min

Total metal impurities

＜100ppb, ＜50ppb

Shelf Life

2 years

Storage

Under room temperature away from light

Known Application

  1. Photoacid Generator (PAG) in Semiconductor Lithography
    The primary use of CAS 85342-62-7 is as a non-ionic photoacid generator (PAG) used in chemically amplified photoresists. Upon exposure to UV, DUV, or electron-beam radiation, it generates a strong acid that drives resist chemical reactions needed for pattern formation.
  2. Advanced Photoresist Systems
    It is widely used in:
    KrF (248 nm) photoresists
    ArF (193 nm) photoresists
    EUV resist research formulations
    High-resolution semiconductor lithography materials
    Its strong acid generation efficiency makes it suitable for fine pattern transfer in integrated circuit manufacturing.
  3. Microelectronics & Nanofabrication
    Used in:
    Integrated circuit (IC) fabrication
    MEMS manufacturing
    Nano-patterning processes
    Advanced electronic material development
    These applications rely on controlled acid generation and diffusion during exposure and post-exposure bake steps.
  4. UV / Radiation-Induced Polymer Chemistry
    Also used as a cationic photoinitiator, enabling:
    Cationic polymerization reactions
    UV-curable coatings and resins (in research/advanced formulations)
    Polymer surface modification systems

This product is developed by our R&D company Watson International Ltd (https://www.watson-int.com/).