Structure of tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, nonaflate salt CAS 857285-80-4

tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, nonaflate salt CAS 857285-80-4

in , , , , ,

Identification

CAS Number

857285-80-4

Name

tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, nonaflate salt

Synonyms

(4-{2-[(2-Methyl-2-propanyl)oxy]-2-oxoethoxy}phenyl)(diphenyl)sulfonium 1,1,2,2,3,3,4,4,4-nonafluoro-1-butanesulfonate
[IUPAC name – generated by ACD/Name]
(4-{2-[(2-Methyl-2-propanyl)oxy]-2-oxoethoxy}phenyl)(diphenyl)sulfonium-1,1,2,2,3,3,4,4,4-nonafluor-1-butansulfonat
[German]
[IUPAC name – generated by ACD/Name]
1,1,2,2,3,3,4,4,4-Nonafluoro-1-butanesulfonate de (4-{2-[(2-méthyl-2-propanyl)oxy]-2-oxoéthoxy}phényl)(diphényl)sulfonium
[French]
[IUPAC name – generated by ACD/Name]
Unverified
857285-80-4
[RN]
4-(2-tert-Butoxy-2-oxoethoxy)phenylsulfanium nonafluorobutane-1-sulfonate
t-Butyl 2-[4-(diphenylsulfonium)phenoxy]acetate, nonaflate salt
t-Butyl 2-[4-(diphenylsulfonium)phenoxy]acetate,nonaflate salt
tert-butyl 2-[4-(diphenylsulfonium)phenoxy]acetate,nonaflate salt
tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate nonaflate salt
tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, nonaflate salt
tert-Butyl2-[4-(diphenylsulphonium)phenoxy]acetate,nonaflatesalt
{4-[2-(TERT-BUTOXY)-2-OXOETHOXY]PHENYL}DIPHENYLSULFANIUM NONAFLUOROBUTANE-1-SULFONATE

SMILES

CC(C)(C)OC(=O)COc1ccc(S+c2ccccc2)cc1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

StdInChI

InChI=1S/C24H25O3S.C4HF9O3S/c1-24(2,3)27-23(25)18-26-19-14-16-22(17-15-19)28(20-10-6-4-7-11-20)21-12-8-5-9-13-21;5-1(6,3(9,10)11)2(7,8)4(12,13)17(14,15)16/h4-17H,18H2,1-3H3;(H,14,15,16)/q+1;/p-1

StdInChIKey

QGJXWNMBTQGAFT-UHFFFAOYSA-M

Molecular Formula

C28H25F9O6S2

Molecular Weight

692.604

Properties

Appearance

White to off-white powder

Safety Data

RIDADR 

NONH for all modes of transport

WGK Germany

3

Specifications and Other Information of Our tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, nonaflate salt CAS 857285-80-4

Identification Methods

HNMR, HPLC

Purity

99%min, 99.5% min

Total metal impurities

＜100ppb, ＜50ppb

Shelf Life

2 years

Storage

Under room temperature away from light

Known Application

  1. Photoacid Generator (PAG) for Semiconductor Lithography
    The primary application of CAS 857285-80-4 is as a photoacid generator (PAG) in chemically amplified photoresists. The sulfonium cation generates a strong acid upon exposure to UV, DUV, electron-beam, or EUV radiation, enabling high-resolution pattern formation in semiconductor manufacturing.
  2. Advanced Photoresist Formulations
    Used in:
    KrF (248 nm) photoresists
    ArF (193 nm) photoresists
    EUV photoresists
    High-resolution micro- and nano-patterning materials
    The nonaflate counterion provides strong acidity, good thermal stability, and controlled acid diffusion, which are important for advanced lithography processes.
  3. Microelectronics and MEMS Fabrication
    Applied in:
    Integrated circuit (IC) manufacturing
    MEMS devices
    Microelectronic patterning
    Nanofabrication technologies
    A related patent describes its use in radiation-sensitive resin compositions, confirming its role in photoresist systems.
  4. Electronic Materials Research
    Used in the development of:
    Chemically amplified resist systems
    Radiation-sensitive polymers
    Advanced electronic materials
    Next-generation lithographic materials

This product is developed by our R&D company Watson International Ltd (https://www.watson-int.com/).