Structure of TPS-PFBS CAS 144317-44-2

TPS-PFBS CAS 144317-44-2

Identification

CAS Number

144317-44-2

Name

TPS-PFBS

Synonyms

1,1,2,2,3,3,4,4,4-Nonafluoro-1-butanesulfonate de triphénylsulfonium
Triphenylsulfonium 1,1,2,2,3,3,4,4,4-nonafluoro-1-butanesulfonate
Triphenylsulfonium nonafluorobutanesulfonate
triphenylsulfonium perfluorobutanesulfonate
Triphenylsulfonium-1,1,2,2,3,3,4,4,4-nonafluor-1-butansulfonat
Sulfonium, triphenyl-, 1,1,2,2,3,3,4,4,4-nonafluoro-1-butanesulfonate (1:1)
TRIPHENYLSULFANIUM NONAFLUOROBUTANE-1-SULFONATE
Triphenylsulfonium nonaflate
Triphenylsulfonium Nonafluoro-1-butanesulfonate
Triphenylsulfonium Nonafluorobutane-1-sulfonate
Triphenylsulfonium perfluoro-1-butanesufonate
Triphenylsulphonium nonaflate

SMILES

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.c1ccc(S+c2ccccc2)cc1

StdInChI

InChI=1S/C18H15S.C4HF9O3S/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18;5-1(6,3(9,10)11)2(7,8)4(12,13)17(14,15)16/h1-15H;(H,14,15,16)/q+1;/p-1

StdInChIKey

VLLPVDKADBYKLM-UHFFFAOYSA-M

Molecular Formula

C22H15F9O3S2

Molecular Weight

562.461

MDL Number

MFCD02683476

Properties

Appearance

White to off-white powder

Safety Data

Symbol

exclamation-mark-jpgGHS07

Signal Word

Warning

Hazard statements

H315-H319-H335

Precautionary Statements

P261;P305+351+338;P302+352

RIDADR 

NONH for all modes of transport

Specifications and Other Information of Our TPS-PFBS CAS 144317-44-2

Identification Methods

HNMR, HPLC

Purity

99% min, 99.5% min

Total metal impurities

<100ppb, <50ppb

Shelf Life

2 years

Storage

Under room temperature away from light

Known Application

  1. Photoacid Generator (PAG) for Semiconductor Lithography
    The primary application of CAS 144317-44-2 is as a photoacid generator (PAG) in chemically amplified photoresists used for semiconductor manufacturing. Upon UV, DUV, electron-beam, or EUV exposure, it generates a strong acid that catalyzes deprotection reactions during photoresist development.
  2. Advanced Photoresist Formulations
    Used in:
    Deep UV (248 nm) photoresists
    ArF (193 nm) photoresists
    EUV resist research
    High-resolution microelectronic patterning materials
    The nonaflate (perfluorobutanesulfonate) anion provides strong acidity with lower environmental concern compared with some longer-chain perfluorinated sulfonates.
  3. Microelectronics and MEMS Fabrication
    Applied in:
    Integrated circuit (IC) manufacturing
    MEMS devices
    Microfluidic device fabrication
    High-resolution micro- and nano-patterning processes
    These applications rely on precise acid generation and controlled acid diffusion during lithographic processing.
  4. UV-Curable and Cationic Polymerization Systems
    Triphenylsulfonium salts are also used as:
    Cationic photoinitiators
    UV-curable coatings
    UV-curable inks
    UV-curable adhesives
    Epoxy resin curing systems
    The generated acid initiates cationic polymerization reactions under light exposure.

This product is developed by our R&D company Watson International Ltd (https://www.watson-int.com/).